Mosfet 6426



Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8. In Stock: 6426 Locations. Package Quantity: 3000. HTS Code: 8541.29.00. ECCN Number: EAR99. Subject to tariff fees. Quantity Cost; 3000-6425: $1.07: 6426+ $0.9846: Order Quantity: Add to cart Secure Payment Methods: Need more Info? Find many great new & used options and get the best deals for 1-10pcs AON6426 AO6426 6426 MOSFET QFN-8 at the best online prices at, Free shipping for many products, Cheap and stylish High quality with Low price Authentic Merchandise Shop Browse various styles of merchandise, online discounts. MOSFET VDSS(V) RDS(ON) MAX AC input(V) Pout(W) Note 1 100±15% 145 IRIS-F6426S 450 0.58Ω 120±15% 190 Key Specifications Data Sheet No. PD 96939A Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant Operation, and the peak power output is obtained by approximately 120 to 140% of the above listed. AON6426 AO6426 6426. No Return / No Exchange / No WarrantyPlease check the model Number and match with your existing. AON6912A AO6912A 6912A MOSFET QFN-8. No Return / No Exchange / No WarrantyPlease check the model Number and match with your existing.

DNK 6426
SLIDER PIONEER DJMS9

Order Code:DNK 6426
Packing unit:1
Net price per pack:US$ 18.91
Amount equals to:EUR 15.99

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Type Designator: AON6418

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.8 V

Maximum Drain Current |Id|: 32 A

Maximum Junction Temperature (Tj): 150 °C

Mosfet 6426Mosfet 6426

Rise Time (tr): 4.8 nS

Drain-Source Capacitance (Cd): 526 pF

Maximum Drain-Source On-State Resistance (Rds): 0.005 Ohm

Package: DFN5X6EP

AON6418 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AON6418 Datasheet (PDF)

0.1. aon6418.pdf Size:306K _aosemi

AON641830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)

8.1. aon6414.pdf Size:156K _aosemi

Ao 6426 Mosfet

AON641430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 30Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

8.2. aon6416.pdf Size:268K _aosemi

6426 mosfet pdf

AON641630V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS30VThe AON6416 is fabricated with SDMOSTM trench ID (at VGS=10V) 22Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

8.3. Deadpool game pc rar. aon6414a.pdf Size:268K _aosemi

AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

8.4. aon6414al.pdf Size:384K _aosemi

AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

8.5. aon6410.pdf Size:158K _aosemi

6426 Mosfet Pdf

Ms terminal services licensing. AON641030V N-Channel MOSFETGeneral Description Product SummaryThe AON6410 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge.ThisID = 24A (VGS = 10V)device is suitable for use as a high side switch inRDS(ON)

6426 Mosfet Price

8.6. aon6413.pdf Size:278K _aosemi

AON641330V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology -30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=-10V) -32A Low Gate Charge RDS(ON) (at VGS=-10V)

8.7. aon6411.pdf Size:262K _aosemi

AON641120V P-Channel MOSFETGeneral Description Product SummaryVDS-20The AON6411 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)

Datasheet: AON7514, AON7702, AON6200, AON6206, AON6408, AON6410, AON6414, AON6414AL, APT50M38JLL, AON6422, AON6454, AON6514, AON6534, AON6542, AON6702, AON6704A, AON6708.




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6426 mosfet pdf

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