Bs170 Fet

BS170 is a TO-92 package MOSFET, this post describes BS170 pinout, equivalent, specs, applications and other useful information about this transistor.

7. From The Data On The Graph, We Will Take A Part Of The Slope Which Has Linear Characteristic And Insert The Figures Into The Above Formula To Ca..
6. Gate Voltage------------- Drain Source Current In Milliamps 0------------------------------------------- 0.5------------------------------------..
Bs170 Mosfet
BS170
Calculating Transconductance For A BS170 MOSFET : 8 Steps ..

Click To Buy $10.00: RV5030360Z: Variable Control 50KB/50KA ON/OFF SW TR-127GK: $15.00: SC-10: PRIORITY SCANNER OPTION: $70.00: SCH-121CP-000: TR-121CP SCHEMATIC. The BS170 MOSFET is a voltage-controlled device with three terminals, gate, drain and source. The gate sees only voltage and no current is used by it. This voltage is known as Vgs or the gate-source This makes it a 'high impedance device'. This can easily be 10 megohms or more!

Features / Technical Specifications:

Package Type: TO-92
Transistor Type: N Channel
Max Voltage Applied From Drain to Source: 60V
Max Gate to Source Voltage Should Be: ±20V
Max Continues Drain Current is : 500mA
Max Pulsed Drain Current is: 500mA
Max Power Dissipation is: 830mW
Minimum Voltage Required to Conduct: 0.8V
Max Storage & Operating temperature Should Be: -55 to +150 Celsius

Replacement and Equivalent:

2N7000, 2N7002, IRFZ44 (The pin configurations of the substitute MOSFETs shown here may be different from BS170, therefore it is recommended to check their pin configurations before replacing in your circuit).

BS170 MOSFET Explained / Description:

BS170 is a well-known N channel MOSFET manufactured in TO-92 package. It can be used for both switching and amplification purposes. When used as switch it can drive load of 500mA. It is able to perform fast switching and capable to switch load in around 7 nanoseconds due to which it can be used in high speed circuits. It can also perform well on low voltage due to which it is an ideal MOSFET to use in portable and battery operated applications.

Other than that it can also be used as an amplifier and you can use it in your audio amplifier circuits and also for any general purpose signal amplification requirements.

Where We Can Use it & How to Use:

BS170 can be used for any general purpose switching and amplification purposes, it can be used as a switch to drive loads under 500mA which is enough drain current to drive most of the relays, lamps, LEDs etc. Additionally it can also be used at the output of microcontrollers and platforms like arduino and raspberry pi to drive loads.

On the other hand it can also be used as an audio amplifier, in audio amplifier stages, low level signal amplification etc. Wiring the MOSFETs are almost same as we wire BJT transistors. In MOSFETs the Gate is used to control the transistor where as in BJT it is Base, but the BJTs are current control devices and MOSFETs are voltage control devices. And the gate in MOSFETs requires small amount of voltage to control current through its Drain to Source.

Applications:

Fast Switching

Switching or driving loads under 500mA

Audio Amplification & Pre Amplification

Output of Microcontrollers

7. From The Data On The Graph, We Will Take A Part Of The Slope Which Has Linear Characteristic And Insert The Figures Into The Above Formula To Ca..

Output of ICs

Various type of signal amplification

How to Safely Long Run in a Circuit:

To get long term and stable performance from BS170 MOSFET in your circuits do not drive load of more than 60V and 500mA. The Gate to Source voltage should be under ±20V and do not operate and store the transistor in temperature below -55 Celsius and above +155 Celsius.

Datasheet:

To Download the datasheet just copy and paste the below link in your browser.

https://pdf1.alldatasheet.com/datasheet-pdf/view/16636/PHILIPS/BS170/+0W54JUL.hKpRudGXtEN+/datasheet.pdf

Número de Parte: BS170

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.83 W

Tensión drenaje-fuente |Vds|: 60 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 3 V

Resistencia drenaje-fuente RDS(on): 5 Ohm

Empaquetado / Estuche: TO92

BS170 Datasheet (PDF)

0.1. bs170rev1x.pdf Size:77K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BS170/DTMOS FET SwitchingN Channel EnhancementBS1701 DRAIN2GATE3 SOURCEMAXIMUM RATINGS12Rating Symbol Value

0.2. bs170 cnv 2.pdf Size:49K _philips

DISCRETE SEMICONDUCTORSDATA SHEETBS170N-channel vertical D-MOStransistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel vertical D-MOS transistor BS170DESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain-source voltage VDS max. 60 Vvertical D-MOS transistor in TO-92Gate-source v

0.3. bs170.pdf Size:652K _fairchild_semi

April 1995 BS170 / MMBF170N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect High density cell design for low RDS(ON).transistors are produced using Fairchild's proprietary, highVoltage controlled small signal switch.cell density, DMOS technology. These products have beendesigned to minimize on-state resi

Sophos 10.8. 0.4. bs170 d26z bs170 d27z bs170 d74z bs170 d75z bs170 l34z bs170 mmbf170.pdf Size:1298K _fairchild_semi

March 2010BS170 / MMBF170N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect High density cell design for low RDS(ON).transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch.cell density, DMOS technology. These products have beendesigned to minimize on-s

0.5. 2n7000kl bs170kl.pdf Size:93K _vishay

2N7000KL/BS170KLVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) () VGS(th) (V) ID (A)Pb-free ESD Protected: 2000 VAvailable2 at VGS = 10 V0.4760 1.0 to 2.5 RoHS*APPLICATIONSCOMPLIANT4 at VGS = 4.5 V0.33 Direct Logic-Level Interface: TTL/CMOS Solid-State Relays Drivers: Relays,

0.6. 2n7000 2n7002 vq1000j-p bs170.pdf Size:58K _vishay

2N7000/2N7002, VQ1000J/P, BS170Vishay SiliconixN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)5 @ VGS = 10 V 0.8 to 3 0.22N70002N7002 7.5 @ VGS = 10 V 1 to 2.5 0.11560VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225BS170 5 @ VGS = 10 V 0.8 to 3 0.5FEATURES BENEFITS APPLICATIONSD

0.7. bs170g bs170rl1g bs170rlra bs170rlrag bs170rlrmg bs170rlrp bs170rlrpg bs170zl1g.pdf Size:88K _onsemi

BS170GSmall Signal MOSFET500 mA, 60 VoltsN-Channel TO-92 (TO-226)Featureshttp://onsemi.com This is a Pb-Free Device*500 mA, 60 VoltsMAXIMUM RATINGSRDS(on) = 5.0 WRating Symbol Value UnitDrain -Source Voltage VDS 60 VdcN-ChannelGate-Source VoltageD- Continuous VGS 20 Vdc- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Current (Note) ID 0.5 AdcGTotal

0.8. bs170g.pdf Size:92K _onsemi

0.9. bs170p.pdf Size:15K _no

N-CHANNEL ENHANCEMENTBS170PMODE VERTICAL DMOS FETISSUE 2 SEPT 93FEATURES* 60 Volt VDS* RDS(on)=5D G SREFER TO ZVN3306A FOR GRAPHSE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb =25C ID 270 mAPulsed Drain Current IDM 3AGate-Source Voltage VGS 20 VPower Dissipati

0.10. bs170f.pdf Size:67K _no

6. Gate Voltage------------- Drain Source Current In Milliamps 0------------------------------------------- 0.5------------------------------------..

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Bs170 Mosfet

0.11. hbs170.pdf Size:403K _shantou-huashan

Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance TO-92 While provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage,

0.12. bs170fta bs170ftc.pdf Size:17K _zetex

SOT23 N-CHANNEL ENHANCEMENTBS170FMODE VERTICAL DMOS FETISSUE 3 - JANUARY 1996FEATURES* 60Volt VDSS* RDS(ON) = 5DGPARTMARKING DETAIL MVSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 0.15 mAPulsed Drain Current IDM 3AGate Source Voltage VGS 20 VPower Dissipation at Tamb=2

0.13. bs170pstoa bs170pstob bs170pstz.pdf Size:15K _zetex

BS170

Otros transistores.. BFR30, BFR31, BFR84, BFS28R, BFT46, BS107P, BS107PT, BS108, 2SK2996, BS170F, BS170P, BS250F, BS250P, BS270, BSN254, BSN254A, BSP92.

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Calculating Transconductance For A BS170 MOSFET : 8 Steps ..